Characterization and Modeling of a 700 V Single Crystal Diffused LDMOS Device 700V单晶扩散型LDMOS的特性与模型
This paper uses a group of analyses equations to describe the relations in the parameters of lateral double diffused MOS ( LDMOS) device. 对横向双扩散MOS器件的沟道夹断,电流饱和以及输出特性做出理论解释。用一组解析方程式描述横向双扩散MOS(LDMOS)器件参数之间的关系。
This article describes the principle and manufacturing method of diffused silicon pressure sensitive device& a key element to pressure transducer. 本文叙述压力传感器的核心部件&扩散硅力敏器件的机理、制造方法。
A 700 V single crystal diffused LDMOS device is investigated. 文章对耐压700V的单晶扩散型LDMOS进行了研究。